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BAT54C.215 датащи(PDF) 3 Page - NXP Semiconductors

номер детали BAT54C.215
подробное описание детали  Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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BAT54C.215 датащи(HTML) 3 Page - NXP Semiconductors

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BAT54_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 5 October 2012
3 of 11
NXP Semiconductors
BAT54 series
Schottky barrier diodes
5.
Limiting values
[1]
Tj =25 C before surge.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
-
30
V
IF
forward current
Tamb =25 C-
200
mA
IFRM
repetitive peak forward
current
tp  1s;  0.5;
Tamb =25 C
-300
mA
IFSM
non-repetitive peak
forward current
square wave;
tp <10ms
[1] -600
mA
Per device; one diode loaded
Ptot
total power dissipation
Tamb  25 C
[2] -250
mW
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device; one diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1][2] -
-
500
K/W


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