©2001 Fairchild Semiconductor Corporation

HUF75307P3, HUF75307D3, HUF75307D3S Rev. B

HUF75307P3, HUF75307D3, HUF75307D3S

15A, 55V, 0.090 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET® process. This

advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA75307.

Features

• 15A, 55V

• Simulation Models

Models

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF75307P3

TO-220AB

75307P

HUF75307D3

TO-251AA

75307D

HUF75307D3S

TO-252AA

75307D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.

D

G

S

JEDEC TO-220AB

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet

December 2001