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SI2333DDS-T1-GE3 датащи(PDF) 1 Page - Vishay Siliconix |
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SI2333DDS-T1-GE3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si2333DDS Document Number: 63861 S12-0801-Rev. A, 16-Apr-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com P-Channel 12 V (D-S) MOSFET FEATURES •TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Smart Phones and Tablet PCs - Load Switch - Battery Switch Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. e. Package limited. MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a Qg (Typ.) - 12 0.028 at VGS = - 4.5 V - 6e 9 nC 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V - 3.6 G TO-236 (SOT-23) S D Top View 2 3 1 Si2333DDS (O4)* * Marking Code Ordering Information: Si2333DDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 6e A TC = 70 °C - 5.2 TA = 25 °C - 5b, c TA = 70 °C - 4b, c Pulsed Drain Current (t = 300 µs) IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 1.4 TA = 25 °C - 0.63b, c Maximum Power Dissipation TC = 25 °C PD 1.7 W TC = 70 °C 1.1 TA = 25 °C 1.20b, c TA = 70 °C 0.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d 5 s RthJA 100 130 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 |
Аналогичный номер детали - SI2333DDS-T1-GE3 |
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Аналогичное описание - SI2333DDS-T1-GE3 |
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