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SI2333DDS датащи(PDF) 2 Page - Vishay Siliconix |
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SI2333DDS датащи(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 63861 S12-0801-Rev. A, 16-Apr-12 Vishay Siliconix Si2333DDS This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 12 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 8 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 2.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µA VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5 A 0.023 0.028 VGS = - 3.7 V, ID = - 4.6 A 0.026 0.032 VGS = - 2.5 V, ID = - 4.3 A 0.033 0.040 VGS = - 1.8 V, ID = - 1 A 0.048 0.063 VGS = - 1.5 V, ID = - 0.5 A 0.075 0.150 Forward Transconductancea gfs VDS = - 5 V, ID = - 5 A 18 S Dynamicb Input Capacitance Ciss VDS = - 6 V, VGS = 0 V, f = 1 MHz 1275 pF Output Capacitance Coss 255 Reverse Transfer Capacitance Crss 236 Total Gate Charge Qg VDS = - 6 V, VGS = - 8 V, ID = - 5 A 23 35 nC VDS = - 6 V, VGS = - 4.5 V, ID = - 5 A 14 21 Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 3.6 Gate Resistance Rg f = 1 MHz 1.9 9.5 19 Turn-On Delay Time td(on) VDD = - 6 V, RL = 6 ID = - 4 A, VGEN = - 4.5 V, RG = 1 26 40 ns Rise Time tr 24 40 Turn-Off Delay Time td(off) 45 70 Fall Time tf 20 35 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 1.4 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IS = - 4 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C 24 48 ns Body Diode Reverse Recovery Charge Qrr 816 nC Reverse Recovery Fall Time ta 9 ns Reverse Recovery Rise Time tb 15 |
Аналогичный номер детали - SI2333DDS |
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Аналогичное описание - SI2333DDS |
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