STD150N3LLH6 datasheet(4/16 Pages) STMICROELECTRONICS

номер детали	STD150N3LLH6

подробное описание детали	N-channel 30 V, 0.0024 ohm , 80 A, DPAK, IPAK, TO-220

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Electrical characteristics

STD150N3LLH6, STP150N3LLH6, STU150N3LLH6

4/16

Doc ID 15227 Rev 3

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

30

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V

VDS = 30 V,Tc = 125 °C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

12.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

SMD version

0.0024 0.0028

Ω

VGS = 10 V, ID = 40 A

0.0029 0.0033

Ω

VGS = 4.5 V, ID = 40 A

SMD version

0.0034 0.0045

Ω

VGS = 4.5 V, ID = 40 A

0.0039 0.0049

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

-

4040

740

425

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 80 A

VGS = 4.5 V

(see Figure 14)

-

40

16.3

15.8

-

nC

RG

Gate input resistance

f = 1 MHz gate bias

Bias = 0 test signal

level = 20 mV

open drain

-1.4

-

Ω

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STD150N3LLH6 датащи(PDF) 4 Page - STMicroelectronics

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