поискавой системы для электроныых деталей |
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HUFA76419D3 датащи(PDF) 4 Page - Fairchild Semiconductor |
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HUFA76419D3 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA76419D3, HUFA76419D3S Rev. B FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 10 200 110 100 1 200 100 µs 10ms 1ms VDS, DRAIN TO SOURCE VOLTAGE (V) LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS TJ = MAX RATED TC = 25 oC SINGLE PULSE 100 10 200 0.01 0.1 1 10 100 1 tAV, TIME IN AVALANCHE (ms) STARTING TJ = 25 oC STARTING TJ = 150 oC tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 10 20 30 40 50 13 4 5 0 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 2 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 4V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 10 20 30 40 50 0123 4 0 VGS = 3.5V TC = 25 oC VGS = 10V VGS = 5V 30 35 50 24 6 8 10 25 ID = 10A VGS, GATE TO SOURCE VOLTAGE (V) ID = 20A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 40 45 1.0 1.5 2.0 2.5 -80 -40 0 40 80 120 160 200 0.5 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 20A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX HUFA76419D3, HUFA76419D3S |
Аналогичный номер детали - HUFA76419D3 |
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Аналогичное описание - HUFA76419D3 |
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