поискавой системы для электроныых деталей |
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BA5826FP датащи(PDF) 5 Page - Rohm |
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BA5826FP датащи(HTML) 5 Page - Rohm |
5 / 6 page 5/5 REV. A provided with an enough margin should be done. (12) About operations in a strong electric field When used in a strong electric field, note that a malfunction may occur. (13) ASO When using this IC, the output Tr. must be set not to exceed the values specified in the absolute maximum ratings and ASO. (14) Thermal shutdown circuit This IC incorporates a thermal shutdown circuit (TSD circuit). When the chip temperature reaches the value shown below, the coil output to the motor will be set to open. The thermal shutdown circuit is designed only to shut off the IC from a thermal runaway and not intended to protect or guarantee the entire IC functions. Therefore, users cannot assume that the TSD circuit once activated can be used continuously in the subsequent operations. TSD ON Temperature [ °C] (typ.) Hysteresis Temperature [ °C] (typ.) 175 25 (15) About earth wiring patterns When a small signal GND and a large current GND are provided, it is recommended that the large current GND pattern and the small signal GND pattern should be separated and grounded at a single point of the reference point of the set in order to prevent the voltage of the small signal GND from being affected by a voltage change caused by the resistance of the pattern wiring and the large current. Make sure that the GND wiring patterns of the external components will not change, too. (16) This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other. This P layer and an N layer in each element form a PN junction to construct various parasitic elements. Due to the IC structure, the parasitic elements are inevitably created by the potential relationship. Activation of the parasitic elements can cause interference between circuits and may result in a malfunction or, consequently, a fatal damage. Therefore, make sure that the IC must not be used under conditions that may activate the parasitic elements, for example, applying the lower voltage than the ground level (GND, P substrate) to the input terminals. Note that, while not applying the power supply voltage to the IC, any voltage must not be applied to the input terminals. In addition, do not applying the voltage to input terminals without applying the power supply voltage to the IC. Also while applying the power supply voltage, each input terminal must be the power supply voltage or less; or within the guaranteed values in the electric characteristics. |
Аналогичный номер детали - BA5826FP |
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Аналогичное описание - BA5826FP |
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