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TPA3112D1EVM датащи(PDF) 3 Page - Texas Instruments |
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TPA3112D1EVM датащи(HTML) 3 Page - Texas Instruments |
3 / 27 page TPA3112D1 www.ti.com SLOS654C – SEPTEMBER 2009 – REVISED JULY 2012 RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT VCC Supply voltage PVCC, AVCC 8 26 V VIH High-level input voltage SD, GAIN0, GAIN1 2 V VIL Low-level input voltage SD, GAIN0, GAIN1 0.8 V VOL Low-level output voltage FAULT, RPULLUP=100kΩ, VCC=26V 0.8 V IIH High-level input current SD, GAIN0, GAIN1, VI = 2, VCC = 18 V 50 µA IIL Low-level input current SD, GAIN0, GAIN1, VI = 0.8V, VCC = 18 V 5 µA TA Operating free-air temperature –40 85 °C DC CHARACTERISTICS TA = 25°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Class-D output offset voltage (measured | VOS | VI = 0 V, Gain = 36 dB 1.5 15 mV differentially) ICC Quiescent supply current SD = 2 V, no load, PVcc=21V 40 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVcc=21V 400 µA High Side 240 IO = 500 mA, rDS(on) Drain-source on-state resistance m Ω TJ = 25°C Low side 240 GAIN0 = 0.8 V 19 20 21 GAIN1 = 0.8 V dB GAIN0 = 2 V 25 26 27 G Gain GAIN0 = 0.8 V 31 32 33 GAIN1 = 2 V dB GAIN0 = 2 V 35 36 37 tON Turn-on time SD = 2 V 10 ms tOFF Turn-off time SD = 0.8 V 2 μs GVDD Gate Drive Supply IGVDD = 2mA 6.5 6.9 7.3 V DC CHARACTERISTICS TA = 25°C, VCC = 12 V, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Class-D output offset voltage (measured | VOS | VI = 0 V, Gain = 36 dB 1.5 15 mV differentially) ICC Quiescent supply current SD = 2 V, no load, PVcc=12V 20 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVcc=12V 200 µA High Side 240 IO = 500 mA, rDS(on) Drain-source on-state resistance m Ω TJ = 25°C Low side 240 GAIN0 = 0.8 V 19 20 21 GAIN1 = 0.8 V dB GAIN0 = 2 V 25 26 27 G Gain GAIN0 = 0.8 V 31 32 33 GAIN1 = 2 V dB GAIN0 = 2 V 35 36 37 tON Turn-on time SD = 2 V 10 ms tOFF Turn-off time SD = 0.8 V 2 μs GVDD Gate Drive Supply IGVDD = 2mA 6.5 6.9 7.3 V PLIMIT Output Voltage maximum under PLIMIT VPLIMIT=2.0 V; VI=6.0V differential 6.75 7.90 8.75 V control Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPA3112D1 |
Аналогичный номер детали - TPA3112D1EVM |
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Аналогичное описание - TPA3112D1EVM |
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