IRLM110A datasheet(1/7 Pages) FAIRCHILD

номер детали	IRLM110A

подробное описание детали	Advanced Power MOSFET

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IRLM110A

BV

DSS = 100 V

R

DS(on) = 0.44 Ω

I

D = 1.5 A

100

1.5

1.18

12

±20

60

1.5

0.22

6.5

2.2

0.018

- 55 to +150

300

56.8

--

ν Avalanche Rugged Technology

ν Rugged Gate Oxide Technology

ν Lower Input Capacitance

ν Improved Gate Charge

ν Extended Safe Operating Area

ν Lower Leakage Current : 10 µA(Max.) @ V

DS = 100V

ν Lower R

DS(ON) : 0.336 Ω (Typ.)

Advanced Power MOSFET

Thermal Resistance

Junction-to-Ambient *

RθJA

o

C/W

Characteristic

Max.

Units

Symbol

Typ.

FEATURES

* When mounted on the minimum pad size recommended (PCB Mount).

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T

C=25

o

C)

Continuous Drain Current (T

C=70

o

C)

Drain Current-Pulsed

(1)

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

(2)

Avalanche Current

(1)

Repetitive Avalanche Energy

(1)

Peak Diode Recovery dv/dt

(3)

Total Power Dissipation (T

C=25

o

C) *

Linear Derating Factor *

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

Characteristic

Value

Units

Symbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

I

D

A

V

mJ

A

mJ

V/ns

W

W/

o

C

A

o

C

V

DSS

V

SOT-223

1. Gate 2. Drain 3. Source

2

1

3

P

D

T

J, TSTG

T

L

Rev. A

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