SIHP24N65E datasheet(1/8 Pages) VISHAY

номер детали	SIHP24N65E

подробное описание детали	E Series Power MOSFET

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SiHP24N65E

www.vishay.com

Vishay Siliconix

S12-3104-Rev. F, 24-Dec-12

1

Document Number: 91475

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low Figure-of-Merit (FOM) Ron x Qg

• Low Input Capacitance (Ciss)

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Qg)

• Avalanche Energy Rated (UIS)

• Material

categorization:

For

definitions

please

see

www.vishay.com/doc?99912

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

•Lighting

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

• Industrial

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6 A.

c. 1.6 mm from case.

d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

700

RDS(on) max. at 25 °C ()VGS = 10 V

0.145

Qg max. (nC)

122

Qgs (nC)

21

Qgd (nC)

37

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

SiHP24N65E-E3

Lead (Pb)-free and Halogen-free

SiHP24N65E-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

± 20

Gate-Source Voltage AC (f > 1 Hz)

30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

24

A

TC = 100 °C

16

Pulsed Drain Currenta

IDM

70

Linear Derating Factor

2W/°C

Single Pulse Avalanche Energyb

EAS

508

mJ

Maximum Power Dissipation

PD

250

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

37

V/ns

Reverse Diode dV/dtd

11

Soldering Recommendations (Peak Temperature)

for 10 s

300c

°C

Аналогичный номер детали - SIHP24N65E

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Vishay Siliconix	SIHP24N65E	220Kb / 8P	E Series Power MOSFET Rev. B, 31-Oct-11
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