поискавой системы для электроныых деталей |
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MJ1000 датащи(PDF) 1 Page - Comset Semiconductor |
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MJ1000 датащи(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN MJ1000 – MJ1001 29/10/2012 COMSET SEMICONDUCTORS 1 | 3 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage MJ1000 60 V MJ1001 80 VCEO Collector-Emitter Voltage IB=0 MJ1000 60 V MJ1001 80 VEBO Emitter-Base Voltage MJ1000 5.0 V MJ1001 IC Collector Current IC(RMS) MJ1000 8.0 A MJ1001 IB Base Current MJ1000 0.1 A MJ1001 PT Power Dissipation @ TC < 25° MJ1000 90 W Derate above 25°C MJ1001 0.515 W/°C TJ Junction Temperature MJ1000 -65 to +200 °C MJ1001 TS Storage Temperature MJ1000 MJ1001 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.94 °C/W |
Аналогичный номер детали - MJ1000_12 |
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Аналогичное описание - MJ1000_12 |
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