©2002 Fairchild Semiconductor Corporation

Rev. A2, October 2002

NPN Epitaxial Silicon Transistor

Symbol

Parameter

Value

Units

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

10

V

Collector Current

100

mA

Collector Power Dissipation

300

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

50

V

Collector-Emitter Breakdown Voltage

50

V

Collector Cut-off Current

0.1

µA

DC Current Gain

20

Collector-Emitter Saturation Voltage

0.3

V

Current Gain Bandwidth Product

250

MHz

Output Capacitance

f=1.0MHz

3.7

pF

Input Off Voltage

V

Input On Voltage

3

V

Input Resistor

3.2

4.7

6.2

K

Ω

Resistor Ratio

0.9

1.0

1.1

1.Emitter 2. Collector 3. Base

KSR1201

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Complement to KSR2201

Equivalent Circuit

B

E

C

R1

R2

TO-92S

1