New Product

SiA437DJ

www.vishay.com

Vishay Siliconix

S12-2728-Rev. A, 12-Nov-12

1

Document Number: 62777

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

P-Channel 20 V (D-S) MOSFET

FEATURES

- Small Footprint Area

- Low On-Resistance

• Material categorization: For definitions of compliance

APPLICATIONS

• Providing low voltage drop in Smart Phones, Tablet PCs,

Mobile Computing:

- Battery Switches

- Load Switches

- Power Management

Notes

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

- 20

- 29.7

28 nC

- 25

- 19.7

- 4

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

D

D

D

G

S

S

2.05 mm

2.05 mm

Ordering Information:

SiA437DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFET

Marking Code

X X X

B U X

Lot Traceability

and Date code

Part # code

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

- 20

V

Gate-Source Voltage

± 8

- 29.7

A

- 23.8

Pulsed Drain Current (t = 300 μs)

- 60

Continuous Source-Drain Diode Current

- 16

Maximum Power Dissipation

19

W

12

Operating Junction and Storage Temperature Range

- 50 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

 5 s

28

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

5.3

6.5