поискавой системы для электроныых деталей |
|
SIA483DJ датащи(PDF) 4 Page - Vishay Siliconix |
|
SIA483DJ датащи(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 62779 S12-2394-Rev. A, 15-Oct-12 Vishay Siliconix SiA483DJ New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Soure-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.020 0.040 0.060 0.080 0.0 2.0 4.0 6.0 8.0 10.0 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 8 A Time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s 100 ms Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 100 μs 1 s DC |
Аналогичный номер детали - SIA483DJ |
|
Аналогичное описание - SIA483DJ |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |