поискавой системы для электроныых деталей |
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SI1902CDL-T1-GE3 датащи(PDF) 4 Page - Vishay Siliconix |
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SI1902CDL-T1-GE3 датащи(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 67876 S11-2306-Rev. B, 21-Nov-11 Vishay Siliconix Si1902CDL New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.60 0.75 0.90 1.05 1.20 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.1 0.2 0.3 0.4 0.5 1.8 2.6 3.4 4.2 5 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 1 A 0 2 4 6 8 10 0.001 0.01 0.1 1 10 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T C = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs DC, 10s, 1s |
Аналогичный номер детали - SI1902CDL-T1-GE3 |
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Аналогичное описание - SI1902CDL-T1-GE3 |
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