2SC4227 datasheet(4/9 Pages) RENESAS

номер детали	2SC4227

подробное описание детали	NPN EPITAXIAL SILICON RF TRANSISTOR

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Data Sheet PU10451EJ01V0DS

2

2SC4227

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

−

0.8

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

0.8

µA

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 7 mA

40

−

240

−

RF Characteristics

Gain Bandwidth Product

fT

VCE = 3 V, IC = 7 mA

4.5

7.0

–

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz

10

12

−

dB

Noise Figure

NF

VCE = 3 V, IC = 7 mA, f = 1 GHz

−

1.4

2.7

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.45

0.9

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

R33

R34

R35

Marking

R33

R34

R35

hFE Value

40 to 90

70 to 150

110 to 240

Аналогичный номер детали - 2SC4227

производитель	номер детали	датащи	подробное описание детали
NEC	2SC4227	50Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
California Eastern Labs	2SC4227	846Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR
Inchange Semiconductor ...	2SC4227	172Kb / 8P	Low Noise, High Gain
Renesas Technology Corp	2SC4227	212Kb / 14P	Silicon Transistor 1997
Renesas Technology Corp	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD

More results

Аналогичное описание - 2SC4227

производитель	номер детали	датащи	подробное описание детали
Continental Device Indi...	CSC1730	184Kb / 3P	NPN SILICON EPITAXIAL RF TRANSISTOR
Renesas Technology Corp	2SC5015	182Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR
Renesas Technology Corp	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4227	846Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC5013	816Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR
Renesas Technology Corp	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
	2SC5011	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
	2SC5013	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4093	571Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC5015	1Mb / 7P	NPN EPITAXIAL SILICON RF TRANSISTOR
Renesas Technology Corp	2SC3357	218Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR

More results

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