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STD3NM60T4 датащи(PDF) 4 Page - STMicroelectronics

номер детали STD3NM60T4
подробное описание детали  N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET
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Electrical characteristics
STD3NM60, STD3NM60-1, STP4NM60
4/17
Doc ID 8370 Rev 4
2
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA, VGS =0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 1.5 A
1.3
1.5
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS = 15 V , ID = 1.5 A
-
2.7
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
324
132
7.4
-
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 1.5 A
RG =4.7 Ω VGS = 10 V
(see
Figure 15)
-
9
4
16.5
10.5
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 3 A,
VGS = 10V
(see
Figure 21)
-
10
3
4.7
14
nC
nC
nC
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