IRF3710ZS datasheet(4/12 Pages) KERSEMI

номер детали	IRF3710ZS

подробное описание детали	Advanced Process Technology Ultra Low On-Resistance

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производитель	KERSEMI [Kersemi Electronic Co., Ltd.]

домашняя страница	http://www.kersemi.com

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IRF3710Z/S/L

4

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

100000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

C

iss

= C

gs

+ C

gd

,

C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0

2040

6080

100

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VDS= 80V

VDS= 50V

VDS= 20V

ID= 35A

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

TJ = 25°C

TJ = 175°C

VGS = 0V

1

10

100

1000

VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

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