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Document Number: 72014

S-80642-Rev. E, 24-Mar-08

Vishay Siliconix

Si2315BDS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

1

10

20

0.0

0.2

0.4

0.6

0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.0

0.1

0.2

0.3

0.4

0

1234

5

0.01

0

1

6

12

2

4

10

600

0.1

Time (s)

8

10

100

Safe Operating Area

100

1

0.1

1

10

100

Limited

0.01

10

Single Pulse

10 ms

100 ms

DC, 100 s

0.1

1 s

10 s