FDC8601 datasheet(3/7 Pages) FAIRCHILD

номер детали	FDC8601

подробное описание детали	N-Channel Shielded Gate PowerTrench짰 MOSFET

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FDC8601 Rev. C1

Typical Characteristics T

J = 25 °C unless otherwise noted

Figure 1.

01

23

45

0

3

6

9

12

V

GS = 6.5 V

V

GS = 5.5 V

V

GS = 10 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V

GS = 5 V

V

GS = 6 V

V

DS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics

Figure 2.

0

369

12

0

1

2

3

4

5

V

GS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

V

GS = 6 V

V

GS = 6.5 V

V

GS = 5.5 V

V

GS = 10 V

Normalized On-Resistance

vs Drain Current and Gate Voltage

Figure 3. Normalized On- Resistance

-75

-50

-25

0

25

50

75

100

125

150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 2.7 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (

oC

)

vs Junction Temperature

Figure 4.

4

5

678

9

10

0

100

200

300

400

500

TJ = 125 oC

ID = 2.7 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to

Source Voltage

Figure 5. Transfer Characteristics

23

45

6

7

8

0

3

6

9

12

TJ = 25 oC

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

Аналогичный номер детали - FDC8601

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Fairchild Semiconductor	FDC8602	257Kb / 7P	Dual N-Channel PowerTrench짰 MOSFET 100 V, 1.2 A, 350 m廓

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