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SI7658ADP-T1-GE3 датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI7658ADP-T1-GE3
подробное описание детали  N-Channel 30-V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
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Document Number: 68640
S-81218-Rev. A, 02-Jun-08
Vishay Siliconix
Si7658ADP
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
28
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 6.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.2
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 20 A
0.0018
0.0022
Ω
VGS = 4.5 V, ID = 20 A
0.0023
0.0028
Forward Transconductancea
gfs
VDS = 10 V, ID = 20 A
100
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
4590
pF
Output Capacitance
Coss
810
Reverse Transfer Capacitance
Crss
320
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 20 A
74
110
nC
VDS = 15 V, VGS = 4.5 V, ID = 20 A
34
51
Gate-Source Charge
Qgs
12
Gate-Drain Charge
Qgd
10
Gate Resistance
Rg
f = 1 MHz
0.2
0.8
1.6
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
19
35
ns
Rise Time
tr
510
Turn-Off Delay Time
td(off)
45
85
Fall Time
tf
510
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
45
85
Rise Time
tr
18
45
Turn-Off Delay Time
td(off)
60
110
Fall Time
tf
30
60
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
60
A
Pulse Diode Forward Currenta
ISM
80
Body Diode Voltage
VSD
IS = 4 A
0.72
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
33
50
ns
Body Diode Reverse Recovery Charge
Qrr
25
40
nC
Reverse Recovery Fall Time
ta
16
ns
Reverse Recovery Rise Time
tb
17


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