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SI7501DN-T1-E3 датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI7501DN-T1-E3
подробное описание детали  Complementary 30-V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
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Document Number: 72173
S-81544-Rev. D, 07-Jul-08
Vishay Siliconix
Si7501DN
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
P-Ch
- 1.0
- 3
V
VDS = VGS, ID = 250 µA
N-Ch
1.0
3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
P-Ch
± 200
nA
VDS = 0 V, VGS = ± 20 V
N-Ch
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
P-Ch
- 1
µA
VDS = 30 V, VGS = 0 V
N-Ch
1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 5
VDS = 30 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
On-State Drain Currenta
ID(on)
VDS ≥ - 5 V, VGS = - 10 V
P-Ch
- 25
A
VDS ≤ 5 V, VGS = 10 V
N-Ch
25
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 6.4 A
P-Ch
0.041
0.051
Ω
VGS = 10 V, ID = 7.7 A
N-Ch
0.028
0.035
VGS = - 6 V, ID = - 5.3 A
P-Ch
0.055
0.075
VGS = 4.5 V, ID = 6.5 A
N-Ch
0.040
0.050
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 6.4 A
P-Ch
13
S
VDS = 15 V, ID = 7.7 A
N-Ch
15
Diode Forward Voltagea
VSD
IS = - 1.7 A, VGS = 0 V
P-Ch
- 0.80
- 1.2
V
IS = 1.7 A, VGS = 0 V
N-Ch
0.80
1.2
Dynamicb
Total Gate Charge
Qg
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 6.4 A
N-Channel
VDS = 15 V, VGS = 10 V, ID = 7.7 A
P-Ch
12.5
19
nC
N-Ch
9
14
Gate-Source Charge
Qgs
P-Ch
2.5
N-Ch
2
Gate-Drain Charge
Qgd
P-Ch
3.6
N-Ch
1.3
Gate Resistance
Rg
P-Ch
9
Ω
N-Ch
3
Turn-On Delay Time
td(on)
P-Channel
VDD = - 15 V, RL = 5 Ω
ID ≅ - 3 A, VGEN = - 10 V, RG = 1 Ω
N-Channel
VDD = 15 V, RL = 5 Ω
ID ≅ 3 A, VGEN = 10 V, RG = 1 Ω
P-Ch
10
15
ns
N-Ch
10
15
Rise Time
tr
P-Ch
20
30
N-Ch
15
25
Turn-Off Delay Time
td(off)
P-Ch
25
40
N-Ch
20
30
Fall Time
tf
P-Ch
30
45
N-Ch
10
15
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, dI/dt = 100 A/µs
P-Ch
25
50
IF = 1.7 A, dI/dt = 100 A/µs
N-Ch
20
40


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