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SI7336ADP-T1-E3 датащи(PDF) 2 Page - Vishay Siliconix |
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SI7336ADP-T1-E3 датащи(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 73152 S-80440-Rev. F, 03-Mar-08 Vishay Siliconix Si7336ADP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 25 A 0.0024 0.0030 Ω VGS = 4.5 V, ID = 19 A 0.0031 0.0040 Forward Transconductancea gfs VDS = 15 V, ID = 25 A 110 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 V Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 5600 pF Output Capacitance Coss 860 Reverse Transfer Capacitance Crss 415 Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 20 A 36 50 nC Gate-Source Charge Qgs 18 Gate-Drain Charge Qgd 10 Gate Resistance Rg 0.6 1.3 2.0 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 15 Ω ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω 24 35 ns Rise Time tr 16 25 Turn-Off Delay Time td(off) 90 140 Fall Time tf 32 50 Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/µs 45 70 Output Characteristics 0 10 20 30 40 50 60 0 2468 10 VGS = 10 thru 4 V 3 V VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) |
Аналогичный номер детали - SI7336ADP-T1-E3 |
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Аналогичное описание - SI7336ADP-T1-E3 |
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