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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TIP120 датащи(PDF) 1 Page - Fairchild Semiconductor |
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TIP120 датащи(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 NPN Epitaxial Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test : PW ≤300µs, Duty cycle ≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP120 : TIP121 : TIP122 60 80 100 V V V VCEO Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 60 80 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 8 A IB Base Current (DC) 120 mA PC Collector Dissipation (Ta=25°C) 2 W Collector Dissipation (TC=25°C) 65 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage : TIP120 : TIP121 : TIP122 IC = 100mA, IB = 0 60 80 100 V V V ICEO Collector Cut-off Current : TIP120 : TIP121 : TIP122 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 0.5 0.5 0.5 mA mA mA ICBO Collector Cut-off Current : TIP120 : TIP121 : TIP122 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 0.2 0.2 0.2 mA mA mA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA hFE * DC Current Gain VCE = 3V,IC = 0.5A VCE = 3V, IC = 3A 1000 1000 VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA IC = 5A, IB = 20mA 2.0 4.0 V V VBE(on) * Base-Emitter ON Voltage VCE = 3V, IC = 3A 2.5 V Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 Equivalent Circuit B E C R1 R2 R18k Ω ≅ R20.12k Ω ≅ 1.Base 2.Collector 3.Emitter 1 TO-220 |
Аналогичный номер детали - TIP120 |
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Аналогичное описание - TIP120 |
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