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STB5N52K3 датащи(PDF) 4 Page - List of Unclassifed Manufacturers

номер детали STB5N52K3
подробное описание детали  N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D짼PAK, DPAK, TO-220FP, TO-220, IPAK
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производитель  ETC2 [List of Unclassifed Manufacturers]
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STB5N52K3 датащи(HTML) 4 Page - List of Unclassifed Manufacturers

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Electrical characteristics
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
4/23
Doc ID 16952 Rev 2
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
525
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V; VDS=0
10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.2 A
1.2
1.5
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
545
45
8
-
pF
pF
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent output
capacitance
VDS = 0 to 420 V, VGS = 0
-
33
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
4.7
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 4.4 A,
VGS = 10 V
(see Figure 19)
-
17
3
10
-
nC
nC
nC


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