2SA1020 datasheet(3/5 Pages) TOSHIBA

номер детали	2SA1020

подробное описание детали	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2SA1020

2010-11-09

3

Collector current IC (A)

VCE – IC

Collector current IC (A)

VCE – IC

Collector current IC (A)

hFE – IC

Collector current IC (A)

VCE (sat) – IC

Collector current IC (A)

VBE (sat) – IC

Common emitter

Ta

= 25°C

0

−1.0

−0.2

IB = −5 mA

−0.4

−0.6

−0.8

−0.4

−0.8

−1.2

−1.6

−2.0

−2.4

−80

−200

−40

−20

−120

−2.8

−160

−10

Common emitter

Ta

= 100°C

0

−1.0

−0.2

IB = −5 mA

−0.4

−0.6

−0.8

−0.4

−0.8

−1.2

−1.6

−2.0

−2.4

−80

−30

−60

−40

−180

−2.8

−200

−160

−120

−20

0

−1.0

−0.2

IB = −10 mA

−0.4

−0.6

−0.8

−0.4

−0.8

−1.2

−1.6

−2.0

−2.4

−120

−80

−30

−20

−160

−2.8

−200

−60

−40

Common emitter

Ta

= −55°C

Common emitter

IC/IB = 20

−1

−0.01

−0.5

−0.03

−0.05

−0.1

−0.3

−0.01

−0.03

−0.1

−0.3

−1

−3

Ta

= 100°C

−55

25

Common emitter

IC/IB = 20

−10

−0.1

−5

−0.3

−0.5

−1

−3

−0.01

−0.03

−0.1

−0.3

−1

−3

Ta

= −55°C

25

100

Common emitter

VCE = −2 V

1000

10

500

30

50

100

300

−0.01

−0.03

−0.1

−0.3

−1

Ta

= 100°C

−55

25

−3

Аналогичный номер детали - 2SA1020

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SA1020	194Kb / 3P	TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
Unisonic Technologies	2SA1020	549Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR
List of Unclassifed Man...	2SA1020	61Kb / 1P	TO-92MOD Plastic-Encapsulated Transistors
SHENZHEN YONGERJIA INDU...	2SA1020	132Kb / 1P	TRANSISTOR (PNP)
Unisonic Technologies	2SA1020	170Kb / 4P	PNP EPITAXIAL SILICON TRANSISTOR

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Аналогичное описание - 2SA1020

производитель	номер детали	датащи	подробное описание детали
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