2N4918G datasheet(3/6 Pages) ONSEMI

номер детали	2N4918G

подробное описание детали	Medium-Power Plastic PNP Silicon Transistors

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2N4918 − 2N4920* Series

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3

40

30

20

10

0

25

50

75

100

125

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

Figure 2. Switching Time Equivalent Test Circuit

5.0

10

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (mA)

VCC = 30 V

IC/IB = 20

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.05

20

30

50

70 100

200

700 1000

Vin

t1

VBE(off)

APPROX 9.0 V

TURN−OFF PULSE

t3

t2

APPROX

−11 V

VCC

SCOPE

RB

Cjd <<Ceb

+4.0 V

t1 < 15 ns

100 < t2 < 500 ms

t3 < 15 ns

DUTY CYCLE ≈ 2.0%

Vin

RC

0.07

3.0

TJ = 25°C

TJ = 150°C

IC/IB = 10, UNLESS NOTED

VCC = 60 V

VCC = 30 V

VBE(off) = 0

300

500

0

Vin

APPROX

−11 V

RB and RC

varied to

obtain desired

current levels

tr

VBE(off) = 2.0 V

VCC = 60 V

td

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ON Semiconductor	2N4918	113Kb / 8P	GENERAL.PURPOSE POWER TRANSISTORS April, 2002 ??Rev. 10
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Аналогичное описание - 2N4918G

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