CSD19531KCS datasheet(4/7 Pages) TI1

номер детали	CSD19531KCS

подробное описание детали	100V N-Channel NexFE Power MOSFETs

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0.4

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2.2

−75

−25

25

75

125

175

TC - Case Temperature (ºC)

VGS = 6V

VGS = 10V

ID =60A

G001

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VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

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1.7

1.9

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−75

−25

25

75

125

175

TC - Case Temperature (ºC)

ID = 250uA

G001

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VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 60A

TC = 125°C,I D = 60A

G001

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Qg - Gate Charge (nC)

ID = 60A

VDS = 50V

G001

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100000

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VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD19531KCS

SLPS407 – SEPTEMBER 2013

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 4. Gate Charge

Figure 5. Capacitance

TEXT ADDED FOR SPACING

Figure 6. Threshold Voltage vs. Temperature

Figure 7. On-State Resistance vs. Gate-to-Source Voltage

TEXT ADDED FOR SPACING

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

4

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