STGP20H60DF datasheet(9/22 Pages) STMICROELECTRONICS

номер детали	STGP20H60DF

подробное описание детали	600 V, 20 A high speed trench gate field-stop IGBT

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производитель	STMICROELECTRONICS [STMicroelectronics]

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9 / 22 page

DocID023740 Rev 4

9/22

STGB20H60DF, STGF20H60DF, STGP20H60DF

Electrical characteristics

Figure 12. VCE(sat) vs. junction temperature

Figure 13. VCE(sat) vs. collector current

Figure 14. Forward bias safe operating area for

D2PAK and TO-220

Figure 15. Thermal impedance for D2PAK and

TO-220

Figure 16. Forward bias safe operating area for

TO-220FP

Figure 17. Thermal impedance for TO-220FP

VCE(sat)

1.9

1.7

1.5

1.3

-75

25

TJ(°C)

125

(V)

-25

75

2.1

2.3

IC= 40 A

VGE= 15 V

IC= 20 A

IC= 10 A

AM16290V1

VCE(sat)

2.2

1.8

1.4

1.0

020

IC(A)

(V)

10

30

VGE= 15 V

TJ = 175 °C

TJ = -40 °C

TJ = 25 °C

AM16291V1

(single pulse TC=25°C,

TJ<=175°C; VGE=15V)

IC

10

1

0.1

1

100

VCE(V)

(A)

10

1 ms

100 µs

AM16280V1

10

-5

10

-4

10

-3

10

-2

10

-1

tp(s)

10

-2

10

-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

δ=tp/τ

tp

τ

Single pulse

δ=0.5

ZthTO2T_B

IC

10

1

0.1

1

100

VCE(V)

(A)

10

1 ms

100 µs

1 µs

(single pulse TC=25°C,

TJ<=175°C; VGE=15V)

AM16283V1

Zth=k Rthj-c

δ=tp/τ

tp

τ

10

-5

10

-4

10

-3

10

-2

10

-1

tp(s)

10

-3

10

-1

K

0.2

0.05

0.02

0.01

0.1

Single pulse

δ=0.5

ZthTOF2T_B

10

-2

10

Аналогичный номер детали - STGP20H60DF

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGP20M65DF2	520Kb / 16P	Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT DS11374 - Rev 3 - October 2018
	STGP20NB37LZ	50Kb / 6P	N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT
	STGP20NB60H	86Kb / 8P	N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT
	STGP20NB60K	42Kb / 6P	N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT
	STGP20NC60V	293Kb / 11P	N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT

More results

Аналогичное описание - STGP20H60DF

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGW20H60DF	1Mb / 17P	600 V, 20 A high speed trench gate field-stop IGBT June 2013 Rev 1
	STGFW20V60F	1Mb / 19P	600 V, 20 A very high speed trench gate field-stop IGBT July 2013 Rev 1
	STGB20V60F	1Mb / 18P	600 V, 20 A very high speed trench gate field-stop IGBT July 2013 Rev 1
List of Unclassifed Man...	STGP20V60DF	2Mb / 23P	600 V, 20 A very high speed trench gate field-stop IGBT
STMicroelectronics	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT March 2013 Rev 3
	STGFW20V60DF	709Kb / 15P	Trench gate field-stop IGBT, V series 600 V, 20 A very high speed February 2017 Rev 2
	STGB5H60DF	872Kb / 30P	Trench gate field-stop IGBT, H series 600 V, 5 A high speed May 2015 Rev 3
	STGWT15H60F	845Kb / 15P	Trench gate field-stop IGBT, H series 600 V, 15 A high speed February 2017
	STGW60H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed February 2014 Rev 3
	STGB7H60DF	985Kb / 25P	Trench gate field-stop IGBT, H series 600 V, 7 A high speed June 2015 Rev 2

More results

STGP20H60DF датащи(PDF) 9 Page - STMicroelectronics

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Аналогичный номер детали - STGP20H60DF

Аналогичное описание - STGP20H60DF

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