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STU80N4F6 датащи(PDF) 4 Page - STMicroelectronics

номер детали STU80N4F6
подробное описание детали  N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK
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производитель  STMICROELECTRONICS [STMicroelectronics]
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Electrical characteristics
STD80N4F6, STU80N4F6
4/18
DocID023839 Rev 3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA, VGS = 0
40
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 40 V
VDS = 40 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 40 A
for DPAK
for IPAK
5.5
5.8
6
6.3
m
Ω
m
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
2150
-
pF
Coss
Output capacitance
-
335
-
pF
Crss
Reverse transfer
capacitance
-
160
-
pF
Qg
Total gate charge
VDD = 20 V, ID = 80 A,
VGS = 10 V
(see Figure 14)
-36
-
nC
Qgs
Gate-source charge
-
11
-
nC
Qgd
Gate-drain charge
-
9
-
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
Turn-on delay time
VDD = 20 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
-
10.5
-
ns
tr
Rise time
-
7.6
-
ns
td(off)
Turn-off delay time
-
46.1
-
ns
tf
Fall time
-
11.9
-
ns


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