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STP25N80K5 датащи(PDF) 5 Page - STMicroelectronics

номер детали STP25N80K5
подробное описание детали  N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK
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STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
Electrical characteristics
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 10 A,
RG=4.7 Ω, VGS=10 V
(see Figure 21)
-25
-
ns
tr
Rise time
-
13
-
ns
td(off)
Turn-off delay time
-
60
-
ns
tf
Fall time
-
15
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
19.5
A
ISDM
Source-drain current (pulsed)
-
78
A
VSD
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD= 19.5 A, VGS=0
-
1.5
V
trr
Reverse recovery time
ISD= 19.5 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 20)
-
515
ns
Qrr
Reverse recovery charge
-
11
μC
IRRM
Reverse recovery current
-
43.2
A
trr
Reverse recovery time
ISD= 19.5 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 20)
-
615
ns
Qrr
Reverse recovery charge
-
13
μC
IRRM
Reverse recovery current
-
43
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
30
-
-
V


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