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STP25N80K5 датащи(PDF) 5 Page - STMicroelectronics |
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STP25N80K5 датащи(HTML) 5 Page - STMicroelectronics |
5 / 22 page DocID023466 Rev 2 5/22 STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 Electrical characteristics The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 10 A, RG=4.7 Ω, VGS=10 V (see Figure 21) -25 - ns tr Rise time - 13 - ns td(off) Turn-off delay time - 60 - ns tf Fall time - 15 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 19.5 A ISDM Source-drain current (pulsed) - 78 A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD= 19.5 A, VGS=0 - 1.5 V trr Reverse recovery time ISD= 19.5 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 20) - 515 ns Qrr Reverse recovery charge - 11 μC IRRM Reverse recovery current - 43.2 A trr Reverse recovery time ISD= 19.5 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 20) - 615 ns Qrr Reverse recovery charge - 13 μC IRRM Reverse recovery current - 43 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID=0 30 - - V |
Аналогичный номер детали - STP25N80K5 |
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Аналогичное описание - STP25N80K5 |
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