MTV10N100E

6

Motorola TMOS Power MOSFET Transistor Device Data

SAFE OPERATING AREA

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

t, TIME (s)

Figure 14. Thermal Response

Figure 15. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

1.0

0.1

0.001

0.01

1.0E–05

1.0E–04

1.0E–03

1.0E–02

1.0E–01

1.0E+00

1.0E+01

R

θJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

0.2

500

400

300

200

100

0

25

50

75

100

125

150

100

10

1

0.1

0.01

0.1

1

10

100

1000

100

µs

10

µs

1 ms

10 ms

dc

TJ, STARTING JUNCTION TEMPERATURE (°C)

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 20 V

SINGLE PULSE

TC = 25°C

ID = 10 A