MTV10N100E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

1000

—

—

1254

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 1000 Vdc, VGS = 0 Vdc)

(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

—

3.0

7.0

4.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc)

RDS(on)

—

1.07

1.3

Ohm

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 10 Adc)

(VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125°C)

VDS(on)

—

—

11

—

15

15.3

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)

gFS

8.0

10

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

3500

5600

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

264

530

Transfer Capacitance

f = 1.0 MHz)

Crss

—

52

90

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDD = 500 Vdc, ID = 10 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

—

29

60

ns

Rise Time

(VDD = 500 Vdc, ID = 10 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

tr

—

57

120

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

118

240

Fall Time

G = 9.1 Ω)

tf

—

70

140

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 10 Adc,

VGS = 10 Vdc)

QT

—

100

120

nC

(See Figure 8)

(VDS = 400 Vdc, ID = 10 Adc,

VGS = 10 Vdc)

Q1

—

18.4

—

(VDS = 400 Vdc, ID = 10 Adc,

VGS = 10 Vdc)

Q2

—

33

—

Q3

—

36.7

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 10 Adc, VGS = 0 Vdc)

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.885

0.8

1.1

—

Vdc

Reverse Recovery Time

(IS = 10 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

885

—

ns

(IS = 10 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

220

—

(IS = 10 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

667

—

Reverse Recovery Stored Charge

QRR

—

8.0

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

4.5

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

13

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.