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AM29F010-120DGC1 датащи(PDF) 1 Page - Advanced Micro Devices |
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AM29F010-120DGC1 датащи(HTML) 1 Page - Advanced Micro Devices |
1 / 8 page SUPPLEMENT 1/13/98 Publication# 21116 Rev: B Amendment/0 Issue Date: January 1998 Am29F010 Known Good Die 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS s Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements s High performance — 90 or 120 ns maximum access time s Low power consumption — 30 mA max active read current — 50 mA max program/erase current —<25 µA typical standby current s Flexible sector architecture — Eight uniform sectors — Any combination of sectors can be erased — Supports full chip erase s Sector protection — Hardware-based feature that disables/re- enables program and erase operations in any combination of sectors — Sector protection/unprotection can be implemented using standard PROM programming equipment s Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated sector — Embedded Program algorithm automatically programs and verifies data at specified address s Minimum 100,000 program/erase cycles guaranteed s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Data Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion s Tested to datasheet specifications at temperature s Quality and reliability levels equivalent to standard packaged components |
Аналогичный номер детали - AM29F010-120DGC1 |
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Аналогичное описание - AM29F010-120DGC1 |
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