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AM28F010-120FI датащи(PDF) 1 Page - Advanced Micro Devices |
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AM28F010-120FI датащи(HTML) 1 Page - Advanced Micro Devices |
1 / 35 page FINAL Publication# 11559 Rev: H Amendment/+2 Issue Date: January 1998 Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 10,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from –1 V to VCC +1 V s Flasherase™ Electrical Bulk Chip-Erase — One second typical chip-erase s Flashrite™ Programming — 10 µs typical byte-program — Two seconds typical chip program s Command register architecture for microprocessor/microcontroller compatible write interface s On-chip address and data latches s Advanced CMOS flash memory technology — Low cost single transistor memory cell s Automatic write/erase pulse stop timer GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory orga- nized as 128 Kbytes of 8 bits each. AMD’s Flash mem- ories offer the most cost-effective and reliable read/ write non-volatile random access memor y. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM pro- grammers. The Am28F010 is erased when shipped from the factory. The standard Am28F010 offers access times as fast as 70 ns, allowing operation of high-speed microproces- sors without wait states. To eliminate bus contention, the Am28F010 has separate chip enable (CE#) and output enable (OE#) controls. AMD’s Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The Am28F010 uses a command register to manage this functionality, while maintaining a JEDEC Flash Stan- dard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintain- ing maximum EPROM compatibility. AMD’s Flash technology reliably stores memory con- tents even after 10,000 erase and program cycles. The AMD cell is designed to optimize the erase and pro- gramming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The Am28F010 uses a 12.0 V ± 5% V PP high voltage input to perfor m the Flasherase and Flashrite algorithms. The highest degree of latch-up protection is achieved with AMD’s proprietary non-epi process. Latch-up pro- tection is provided for stresses up to 100 milliamps on address and data pins from –1 V to VCC +1 V. The Am28F010 is byte programmable using 10 ms pro- gramming pulses in accordance with AMD’s Flashrite programming algorithm. The typical room temperature programming time of the Am28F010 is two seconds. The entire chip is bulk erased using 10 ms erase pulses according to AMD’s Flasherase alrogithm. Typical era- sure at room temperature is accomplished in less than one second. The windowed package and the 15–20 |
Аналогичный номер детали - AM28F010-120FI |
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Аналогичное описание - AM28F010-120FI |
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