BC817-16 datasheet(1/2 Pages) WINNERJOIN

номер детали	BC817-16

подробное описание детали	NPN EPTTAXIAL SILICON TRANSISTOR

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WEJ

ELECTRONIC

CO.,LTD

NPN EPTTAXIAL SILICON TRANSISTOR

B C 8 1 7 - 1 6 / - 2 5 / 4 0

ELECTRICAL CHARACTERISTICS

(Ta=25 C)

o

Charactcristic

Symbol

Unit

MAX.

MIN.

DC Current Gain Current Gain Group-16

-25

-40

Current Gain Group-16

-25

-40

BC817-16=6A

BC817-25=6B

BC817-40=6C

Ccbo

Vce(sat)

Hfe

SURFACE MOUNT SMALL

SIGANL TRANSISTORS

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

o

Symbol

Rating

Unit

Collector-Emitter Voltage

Collector Current

Peak Fmitter Current

Tsb=50 C(Note1)

o

Emitter-Base Voltage

Peak Colteetor Current

Power Dissipation

Junction Temperature

Storage Temperature

V

Ic

I

P

CEO

M

EM

D

V

T

CBO

j

stg

45

50

1000

800

310

150

-65~150

V

mW

C

O

mA

C

O

Characteristic

Collector-Emitter Saturation Voltage

Base- Emitter Voltage

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

Gain Bandwidth Product

Collector-Base Capacitanee

TYP.

Test Conditions

Vbc

Iebo

fT

Ices

-10

160

250

60

100

170

250

400

600

0.7

1.2

100

5.0

100

12

V

=1.0V, I =100mA

C

e

V

=1.0V, I =300mA

C

e

I =500mA, I =50mA

V

=1.0V, I =300mA

V

=45V,

V

=25V, Tj=150

C

B

C

e

o

V

=4.0V

V

=5V, I =10mA

f=50MHz

V

=10V,f=1.0MHz

eb

e

C

b

Note:Device mounted on ceramic substrate 0.7mmX2.5mm area.

DEVICE MARKING:

2

100

B C 8 1 7 - 1 6 / - 2 5 / 4 0

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Аналогичный номер детали - BC817-16

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BC817-16	47Kb / 8P	NPN general purpose transistor 1999 Jun 01
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Аналогичное описание - BC817-16

производитель	номер детали	датащи	подробное описание детали
SHENZHEN YONGERJIA INDU...	BC817-16	225Kb / 2P	NPN EPTTAXIAL SILICON TRANSISTOR
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