поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

STF7N52DK3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STF7N52DK3
подробное описание детали  N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220
Download  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF7N52DK3 датащи(HTML) 5 Page - STMicroelectronics

  STF7N52DK3 Datasheet HTML 1Page - STMicroelectronics STF7N52DK3 Datasheet HTML 2Page - STMicroelectronics STF7N52DK3 Datasheet HTML 3Page - STMicroelectronics STF7N52DK3 Datasheet HTML 4Page - STMicroelectronics STF7N52DK3 Datasheet HTML 5Page - STMicroelectronics STF7N52DK3 Datasheet HTML 6Page - STMicroelectronics STF7N52DK3 Datasheet HTML 7Page - STMicroelectronics STF7N52DK3 Datasheet HTML 8Page - STMicroelectronics STF7N52DK3 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 16 page
background image
STD7N52DK3, STF7N52DK3, STP7N52DK3
Electrical characteristics
Doc ID 16387 Rev 2
5/16
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 19)
-
12
12
37
19
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
6
24
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 6 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
-
110
440
8
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see
Figure 24)
-
140
680
10
ns
nC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
-
V


Аналогичный номер детали - STF7N52DK3

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
STF7N52K3 STMICROELECTRONICS-STF7N52K3 Datasheet
380Kb / 15P
   N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET
STF7N52K3 STMICROELECTRONICS-STF7N52K3 Datasheet
1Mb / 18P
   N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET
More results

Аналогичное описание - STF7N52DK3

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
STB7N52K3 STMICROELECTRONICS-STB7N52K3_09 Datasheet
1Mb / 18P
   N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET
STD7NM80 STMICROELECTRONICS-STD7NM80 Datasheet
977Kb / 17P
   N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET
STB7N52K3 STMICROELECTRONICS-STB7N52K3 Datasheet
380Kb / 15P
   N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET
STD5N52U STMICROELECTRONICS-STD5N52U Datasheet
943Kb / 18P
   N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET
logo
List of Unclassifed Man...
STU5N52K3 ETC2-STU5N52K3 Datasheet
1Mb / 23P
   N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D짼PAK, DPAK, TO-220FP, TO-220, IPAK
logo
STMicroelectronics
STP4N52K3 STMICROELECTRONICS-STP4N52K3 Datasheet
1Mb / 2P
   N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
February 2013 Rev 2
STD9NM60N STMICROELECTRONICS-STD9NM60N Datasheet
902Kb / 16P
   N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET
STD6N52K3 STMICROELECTRONICS-STD6N52K3 Datasheet
249Kb / 12P
   N-channel 525 V, 1 廓, 5 A, DPAK, TO-220FP SuperMESH3??Power MOSFET
STB3N62K3 STMICROELECTRONICS-STB3N62K3_09 Datasheet
554Kb / 20P
   N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STF12N65M5 STMICROELECTRONICS-STF12N65M5 Datasheet
1Mb / 23P
   N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com