STD5NK40ZT4 datasheet(3/13 Pages) STMICROELECTRONICS

номер детали	STD5NK40ZT4

подробное описание детали	N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK

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STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1 mA, VGS = 0

400

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 50µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 1.5 A

1.47

1.8

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15 V, ID = 1.5 A

2.2

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

305

57

11.5

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 400V

44

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD =200 V, ID = 1.5 A

RG = 4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

9.2

6

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =320V, ID =3 A,

VGS =10V

11.7

2.8

5.8

17

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 200 V, ID = 1.5A

RG =4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

22.5

11

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 320V, ID =3A,

RG =4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

8.5

7.5

14.5

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

3

12

A

VSD (1)

Forward On Voltage

ISD = 3 A, VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 3 A, di/dt = 100A/µs

VDD =40V, Tj = 150°C

(see test circuit, Figure 5)

145

464

6.4

ns

nC

A

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Аналогичное описание - STD5NK40ZT4

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STD5NK40ZT4 датащи(PDF) 3 Page - STMicroelectronics

STD5NK40ZT4 датащи(HTML) 3 Page - STMicroelectronics

Аналогичный номер детали - STD5NK40ZT4

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