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74LVC2G00GF датащи(PDF) 1 Page - NXP Semiconductors |
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74LVC2G00GF датащи(HTML) 1 Page - NXP Semiconductors |
1 / 20 page 1. General description The 74LVC2G00 provides a 2-input NAND gate function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2. Features and benefits Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant outputs for interfacing with 5 V logic High noise immunity 24 mA output drive (V CC =3.0 V) CMOS low power consumption Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8-B/JESD36 (2.7 V to 3.6 V) Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from 40 Cto +85 C and 40 Cto+125 C 74LVC2G00 Dual 2-input NAND gate Rev. 12 — 8 April 2013 Product data sheet |
Аналогичный номер детали - 74LVC2G00GF |
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Аналогичное описание - 74LVC2G00GF |
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