поискавой системы для электроныых деталей |
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TPCA8052-H датащи(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8052-H датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8052-H 2013-11-01 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 40 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 23 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 0.2 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 10 A ⎯ 9.1 13.1 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 10 A ⎯ 7.2 11.3 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 29 58 ⎯ S Input capacitance Ciss ⎯ 1620 2110 Reverse transfer capacitance Crss ⎯ 85 130 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 280 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz ⎯ 2.3 3.5 Ω Rise time tr ⎯ 2.4 ⎯ Turn-on time ton ⎯ 8.4 ⎯ Fall time tf ⎯ 8.0 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 35 ⎯ ns VDD ≈ 32 V, VGS = 10 V, ID = 20 A ⎯ 25 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 32 V, VGS = 5 V, ID = 20 A ⎯ 13 ⎯ Gate-source charge 1 Qgs1 ⎯ 5.6 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 3.8 ⎯ Gate switch charge QSW VDD ≈ 32 V, VGS = 10 V, ID = 20 A ⎯ 6.8 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 60 A Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 20 V 0 V VGS 10 V ID = 10 A VOUT |
Аналогичный номер детали - TPCA8052-H |
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Аналогичное описание - TPCA8052-H |
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