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ISL12022MIBZ-T7A датащи(PDF) 7 Page - Intersil Corporation |
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ISL12022MIBZ-T7A датащи(HTML) 7 Page - Intersil Corporation |
7 / 31 page ISL12022M 7 FN6668.9 June 20, 2012 tSU:STA START Condition Setup Time SCL rising edge to SDA falling edge. Both crossing 70% of VDD. 600 ns tHD:STA START Condition Hold Time From SDA falling edge crossing 30% of VDD to SCL falling edge crossing 70% of VDD. 600 ns tSU:DAT Input Data Setup Time From SDA exiting the 30% to 70% of VDD window, to SCL rising edge crossing 30% of VDD. 100 ns tHD:DAT Input Data Hold Time From SCL falling edge crossing 30% of VDD to SDA entering the 30% to 70% of VDD window. 20 900 ns tSU:STO STOP Condition Setup Time From SCL rising edge crossing 70% of VDD, to SDA rising edge crossing 30% of VDD. 600 ns tHD:STO STOP Condition Hold Time From SDA rising edge to SCL falling edge. Both crossing 70% of VDD. 600 ns tDH Output Data Hold Time From SCL falling edge crossing 30% of VDD, until SDA enters the 30% to 70% of VDD window. 0 ns tR SDA and SCL Rise Time From 30% to 70% of VDD. 20 + 0.1 x Cb 300 ns 13, 14 tF SDA and SCL Fall Time From 70% to 30% of VDD. 20 + 0.1 x Cb 300 ns 13, 14 Cb Capacitive Loading of SDA or SCL Total on-chip and off-chip 10 400 pF 13, 14 RPU SDA and SCL Bus Pull-up Resistor Off-chip Maximum is determined by tR and tF. For Cb = 400pF, max is about 2kΩ~2.5kΩ. For Cb = 40pF, max is about 15kΩ~20kΩ 1 kΩ 13, 14 NOTES: 7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. 8. Specified at +25°C. 9. Temperature Conversion is inactive below VBAT = 2.7V. Device operation is not guaranteed at VBAT <1.8V. 10. IRQ/FOUT inactive. 11. VDD > VBAT +VBATHYS 12. In order to ensure proper timekeeping, the VDD SR- specification must be followed. 13. Limits should be considered typical and are not production tested. 14. These are I2C specific parameters and are not tested, however, they are used to set conditions for testing devices to validate specification. 15. Minimum VDD and/or VBAT of 1V to sustain the SRAM. The value is based on characterization and it is not tested. 16. To avoid EEPROM recall issues, it is advised to use this minimum power up slew rate. Not tested, shown as typical only. 17. Defined as the deviation from a target oscillator frequency of 32,768.0Hz at room temperature. 18. Defined as the deviation from the room temperature measured 1Hz frequency, VDD = 3.3V, at TA = -40°C to +85°C. 19. Defined as the deviation at room temperature from the measured 1Hz frequency (or equivalent) at VDD = 3.3, over the range of VDD = 2.7V to VDD =5.5V. I2C Interface Specifications Test Conditions: VDD = +2.7 to +5.5V, Temperature = -40°C to +85°C, unless otherwise specified. Boldface limits apply over the operating temperature range, -40°C to +85°C. (Continued) SYMBOL PARAMETER TEST CONDITIONS MIN (Note 7) TYP (Note 8) MAX (Note 7) UNITS NOTES |
Аналогичный номер детали - ISL12022MIBZ-T7A |
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Аналогичное описание - ISL12022MIBZ-T7A |
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