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2SA1360 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SA1360
подробное описание детали  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1360 датащи(HTML) 2 Page - Toshiba Semiconductor

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2SA1360
2010-03-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −150 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −1 mA, IB = 0
−150
V
DC current gain
hFE
(Note 2)
VCE = −5 V, IC = −10 mA
80
240
Collector-emitter saturation voltage
VCE (sat)
IC = −10 mA, IB = −1 mA
−1.0
V
Base-emitter voltage
VBE
VCE = −5 V, IC = −10 mA
−0.8
V
Transition frequency
fT
VCE = −5 V, IC = −10 mA
200
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
2.5
pF
Note 2: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
A1360
Part No. (or abbreviation code)
Characteristics indicator
Lot No.
Note 3


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