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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6613PBF датащи(PDF) 1 Page - International Rectifier |
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IRF6613PBF датащи(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 7/3/06 Notes through are on page 2 DirectFET ISOMETRIC MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. VDSS RDS(on) max Qg(typ.) 40V 3.4m Ω@VGS = 10V 42nC 4.1m Ω@VGS = 4.5V PD - 97087A l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques IRF6613PbF IRF6613TRPbF DirectFET Power MOSFET Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V k ID @ TA = 25°C Continuous Drain Current, VGS @ 10V Ãh A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V h IDM Pulsed Drain Current e PD @TC = 25°C Power Dissipation k PD @TA = 25°C Power Dissipation h PD @TA = 70°C Power Dissipation h W EAS Single Pulse Avalanche Energy f mJ IAR Avalanche Current Ãe A Linear Derating Factor hà W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient hl ––– 45 RθJA Junction-to-Ambient il 12.5 ––– RθJA Junction-to-Ambient jl 20 ––– °C/W RθJC Junction-to-Case kl ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– -40 to + 150 0.022 1.8 200 18 89 2.8 Max. 23 18 180 ±20 40 150 |
Аналогичный номер детали - IRF6613PBF |
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