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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6623PBF датащи(PDF) 2 Page - International Rectifier |
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IRF6623PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6623PbF 2 www.irf.com S D G Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.61mH, RG = 25Ω, IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad. Notes: Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Rθ is measured at TJ of approximately 90°C. Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.4 5.7 m Ω ––– 7.5 9.7 VGS(th) Gate Threshold Voltage 1.4 ––– 2.2 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 34 ––– ––– S Qg Total Gate Charge ––– 11 17 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC Qgd Gate-to-Drain Charge ––– 4.0 ––– Qgodr Gate Charge Overdrive ––– 2.5 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 5.2 ––– Qoss Output Charge ––– 8.9 ––– nC td(on) Turn-On Delay Time ––– 9.7 ––– tr Rise Time ––– 40 ––– td(off) Turn-Off Delay Time ––– 12 ––– ns tf Fall Time ––– 4.5 ––– Ciss Input Capacitance ––– 1360 ––– Coss Output Capacitance ––– 630 ––– pF Crss Reverse Transfer Capacitance ––– 240 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 53 (Body Diode) A ISM Pulsed Source Current ––– ––– 120 (Body Diode) c VSD Diode Forward Voltage ––– 0.81 1.0 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 12 18 nC MOSFET symbol Clamped Inductive Load VDS = 10V, ID = 12A Conditions ƒ = 1.0MHz VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V e VDS = 10V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 4.5V VGS = 4.5V, ID = 12A e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A e TJ = 25°C, IF = 12A di/dt = 100A/µs e TJ = 25°C, IS = 12A, VGS = 0V e showing the integral reverse p-n junction diode. ID = 12A VGS = 0V VDS = 10V ID = 12A |
Аналогичный номер детали - IRF6623PBF |
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