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SI2318CDS-T1-GE3 датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI2318CDS-T1-GE3
подробное описание детали  N-Channel 40 V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
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Document Number: 67030
S10-2250-Rev. A, 04-Oct-10
Vishay Siliconix
Si2318CDS
New Product
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
40
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
39
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 4.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1.2
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
µA
VDS = 40 V, VGS = 0 V, TJ = 70 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS 10 V, ID = 4.3 A
0.035
0.042
VGS 4.5 V, ID = 3.9 A
0.041
0.051
Forward Transconductancea
gfs
VDS = 20 V, ID = 4.3 A
17
S
Dynamicb
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
340
pF
Output Capacitance
Coss
60
Reverse Transfer Capacitance
Crss
30
Total Gate Charge
Qg
VDS = 20 V, VGS = 10 V, ID = 4.3 A
5.8
9
nC
VDS = 20 V, VGS = 4.5 V, ID = 4.3 A
2.9
6
Gate-Source Charge
Qgs
1.1
Gate-Drain Charge
Qgd
0.9
Gate Resistance
Rg
f = 1 MHz
0.6
3.3
6.6
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 5.7 
ID  3.5 A, VGEN = 4.5 V, Rg = 1 
12
20
ns
Rise Time
tr
50
75
Turn-Off Delay Time
td(off)
10
20
Fall Time
tf
8
16
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 5.7 
ID  3.5 A, VGEN = 10 V, Rg = 1 
714
Rise Time
tr
20
30
Turn-Off Delay Time
td(off)
14
21
Fall Time
tf
8
16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.75
A
Pulse Diode Forward Current
ISM
20
Body Diode Voltage
VSD
IS = 3.5 A, VGS 0 V
0.851.2
V
Body Diode Reverse Recovery Time
trr
IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
15
23
ns
Body Diode Reverse Recovery Charge
Qrr
714
nC
Reverse Recovery Fall Time
ta
11
ns
Reverse Recovery Rise Time
tb
4


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