STP18N65M5 datasheet(3/19 Pages) STMICROELECTRONICS

номер детали	STP18N65M5

подробное описание детали	N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

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STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

Electrical ratings

Doc ID 022879 Rev 3

3/19

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

I²PAK

TO-220 TO-247 TO-220FP

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

15

15 (1)

1.

Limited by maximum junction temperature.

A

ID

Drain current (continuous) at TC = 100 °C

9.4

9.4 (1)

A

IDM

(1)

Drain current (pulsed)

60

60 (1)

A

PTOT

Total dissipation at TC = 25 °C

110

25

W

dv/dt (2)

2.

ISD ≤ 15 A, di/dt ≤400 A/µs; VDSPeak < V(BR)DSS, VDD = 400 V

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

I²PAK TO-220 TO-247 TO-220FP

Rthj-case Thermal resistance junction-case max

1.14

5

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

50

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax )

4A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID= IAR; VDD = 50 V)

210

mJ

Аналогичный номер детали - STP18N65M5

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	STP18N65M5	295Kb / 2P	Isc N-Channel MOSFET Transistor

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Аналогичное описание - STP18N65M5

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD11N65M5	1Mb / 25P	N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
	STF31N65M5	1Mb / 25P	N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
	STF11N65M5	1Mb / 25P	N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages December 2012 Rev 2
	STW45N65M5	1Mb / 20P	N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
	STW16N65M5	1Mb / 20P	N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247
	STD13NM60N	989Kb / 21P	N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages
	STF13NM60N	989Kb / 21P	N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages
	STP13NM60N	989Kb / 21P	N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
	STP15N65M5	925Kb / 17P	N-channel 650 V, 0.308 廓 typ., 11 A MDmesh??V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
	STW36N55M5	764Kb / 15P	N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages

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Аналогичный номер детали - STP18N65M5

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