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2N4213 датащи(PDF) 1 Page - Digitron Semiconductors |
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2N4213 датащи(HTML) 1 Page - Digitron Semiconductors |
1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N4212-2N4216, 2N4219 SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive forward and reverse blocking voltage (1) 2N4212 2N4213 2N4214 2N4216 2N4219 VDRM or VRRM 25 50 100 200 400 Volts Forward current RMS (All conduction angles) IT(RMS) 1.6 Amps Peak surge current (One cycle, 60Hz) No repetition until thermal equilibrium is restored ITSM 15 Amps Forward peak gate power PGFM 0.1 Watt Forward average gate power PGF(AV) 0.01 Watt Forward peak gate current IGFM 0.1 Amp Forward peak gate voltage VGFM 6 Volts Reverse peak gate voltage VGRM 6 Volts Operating junction temperature range TJ -65 to 125 °C Storage temperature range Tstg -65 to 150 °C Lead solder temperature (> 1/16” from case, 10 s max.) - 230 °C Note 1: VDRM and VRRM can be applied for all types on a continuous dc basis without incurring damage. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1000ohms)(1) Characteristic Symbol Min Max Unit Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM - - 10 200 µA Forward “on” voltage (ITM = 1Adc peak) VTM - 1.5 Volts Gate trigger current (continuous dc)(2) (VD = 7V, RL = 100ohms) (TC = 25°C) (TC = -65°C) IGT - - 100 300 µAdc Gate trigger voltage (continuous dc) (VD = 7V, RL = 100ohms, TC = 25°C) (VD = 7V, RL = 100ohms, TC = -65°C) (VD = rated VDRM, RL = 100ohms, TJ = 125°C) VGT - - 0.1 0.8 1 - Volts Holding current (VD = 7V) TC = 25°C TC = -65°C IHX - - 3 7 mA Note 1: Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode. Note 2: RGK current is not included in the measurement. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130108 |
Аналогичный номер детали - 2N4213 |
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Аналогичное описание - 2N4213 |
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