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2N4213 датащи(PDF) 1 Page - Digitron Semiconductors

номер детали 2N4213
подробное описание детали  SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS
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производитель  DIGITRON [Digitron Semiconductors]
домашняя страница  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N4213 датащи(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
2N4212-2N4216, 2N4219
SILICON CONTROLLED RECTIFIERS
1.6 AMPS RMS, 25-400 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage (1)
2N4212
2N4213
2N4214
2N4216
2N4219
VDRM or VRRM
25
50
100
200
400
Volts
Forward current RMS
(All conduction angles)
IT(RMS)
1.6
Amps
Peak surge current
(One cycle, 60Hz)
No repetition until thermal equilibrium is restored
ITSM
15
Amps
Forward peak gate power
PGFM
0.1
Watt
Forward average gate power
PGF(AV)
0.01
Watt
Forward peak gate current
IGFM
0.1
Amp
Forward peak gate voltage
VGFM
6
Volts
Reverse peak gate voltage
VGRM
6
Volts
Operating junction temperature range
TJ
-65 to 125
°C
Storage temperature range
Tstg
-65 to 150
°C
Lead solder temperature
(> 1/16” from case, 10 s max.)
-
230
°C
Note 1: VDRM and VRRM can be applied for all types on a continuous dc basis without incurring damage.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1000ohms)(1)
Characteristic
Symbol
Min
Max
Unit
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
-
-
10
200
µA
Forward “on” voltage
(ITM = 1Adc peak)
VTM
-
1.5
Volts
Gate trigger current (continuous dc)(2)
(VD = 7V, RL = 100ohms)
(TC = 25°C)
(TC = -65°C)
IGT
-
-
100
300
µAdc
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100ohms, TC = 25°C)
(VD = 7V, RL = 100ohms, TC = -65°C)
(VD = rated VDRM, RL = 100ohms, TJ = 125°C)
VGT
-
-
0.1
0.8
1
-
Volts
Holding current
(VD = 7V)
TC = 25°C
TC = -65°C
IHX
-
-
3
7
mA
Note 1: Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
Thyristor
devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode.
Note 2: RGK current is not included in the measurement.
sales@digitroncorp.com
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130108


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