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IRF13N50 датащи(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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IRF13N50 датащи(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 7 page SEMICONDUCTOR RoHS RoHS N-Channel Power MOSFET Nell High Power Products IRF13N50 Series (14A, 500Volts) The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors. DESCRIPTION Low reverse transfer capacitance (C = 11pF typical) RSS R = 0.45Ω @ V = 10V DS(ON) GS Ultra low gate charge(81nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature FEATURES PRODUCT SUMMARY I (A) D 14 V (V) DSS 500 0.45 @ V = 10V GS 81 R (Ω) DS(ON) Q (nC) max. G UNIT V /ns V W /°C A mJ ºC -55 to 150 VALUE 14 9.1 500 ±30 56 500 250 9.2 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C T =25°C to 150°C J TEST CONDITIONS R =20KΩ GS V =10V, GS T =25°C C V =10V, GS T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current (Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage(Note 1) SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . . lbf in (N m) 300 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 10 (1.1) 1.6mm from case IAR Repetitive avalanche current (Note 1) 14 T =25°C C 25 Repetitive avalanche energy(Note 1) EAR 1.9 Derating factor above 25 °C www.nellsemi.com Page 1 of 7 They are designed as an extremely efficient and device for use in a wide variety of applications power bipolar switching transistors reliable such as SMPS, UPS, convertors, motor drivers and drivers for high requiring high speed and low gate drive power. EAS Single pulse avalanche energy (Note 2) I =14A, R =50Ω, V =10V AR GS GS I =14A, L=5.7mH AS 560 mJ Note: 1.Repetitive rating: pulse width limited by junction temperature. 2 .V =50V, L=5.7mH, I =14A, R =25Ω, dV/dt=7.6 V/ns, starting T =25˚C DD AS G J 3 .I ≤ 14A, di/dt ≤ 250A/µs, V ≤ V , T 150°C. SD DD (BR)DSS J ≤ W They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. These transistors can be operated directly from integrated circuits. (IRF13N50A) TO-220AB D S G D D (Drain) G (Gate) S (Source) |
Аналогичный номер детали - IRF13N50 |
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Аналогичное описание - IRF13N50 |
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