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IRF13N50 датащи(PDF) 1 Page - Nell Semiconductor Co., Ltd

номер детали IRF13N50
подробное описание детали  N-Channel Power MOSFET
Download  7 Pages
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производитель  NELLSEMI [Nell Semiconductor Co., Ltd]
домашняя страница  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

IRF13N50 датащи(HTML) 1 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
N-Channel Power MOSFET
Nell High Power Products
IRF13N50 Series
(14A, 500Volts)
The Nell IRF13N50 are N-channel enhancement mode
silicon gate power field effect transistors.
DESCRIPTION
Low reverse transfer capacitance
(C
= 11pF typical)
RSS
R
= 0.45Ω @ V
= 10V
DS(ON)
GS
Ultra low gate charge(81nC max.)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
FEATURES
PRODUCT SUMMARY
I (A)
D
14
V
(V)
DSS
500
0.45 @ V
= 10V
GS
81
R
(Ω)
DS(ON)
Q (nC) max.
G
UNIT
V /ns
V
W /°C
A
mJ
ºC
-55 to 150
VALUE
14
9.1
500
±30
56
500
250
9.2
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
T =25°C to 150°C
J
TEST CONDITIONS
R
=20KΩ
GS
V
=10V,
GS
T =25°C
C
V
=10V,
GS
T =100°C
C
Operation junction temperature
Storage temperature
Peak diode recovery dv/dt(Note 3)
PARAMETER
Pulsed Drain current (Note 1)
Continuous Drain Current
Total power dissipation
Gate to Source voltage
Drain to Gate voltage
Drain to Source voltage(Note 1)
SYMBOL
VDGR
VDSS
dv/dt
VGS
IDM
TSTG
PD
ID
TJ
TL
.
.
lbf in (N m)
300
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
-55 to 150
10 (1.1)
1.6mm from case
IAR
Repetitive avalanche current (Note 1)
14
T =25°C
C
25
Repetitive avalanche energy(Note 1)
EAR
1.9
Derating factor above 25
°C
www.nellsemi.com
Page 1 of 7
They are designed as an extremely efficient and
device for use in a wide variety of applications
power bipolar switching transistors
reliable
such as
SMPS, UPS, convertors, motor drivers and drivers for high
requiring high speed
and low gate drive power.
EAS
Single pulse avalanche energy (Note 2)
I
=14A, R
=50Ω, V
=10V
AR
GS
GS
I
=14A, L=5.7mH
AS
560
mJ
Note:
1.Repetitive rating: pulse width limited by junction temperature.
2
.V
=50V, L=5.7mH, I
=14A, R =25Ω, dV/dt=7.6 V/ns, starting T =25˚C
DD
AS
G
J
3
.I
≤ 14A, di/dt ≤ 250A/µs, V
V
, T
150°C.
SD
DD
(BR)DSS
J
W
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
These transistors can be operated directly from
integrated circuits.
(IRF13N50A)
TO-220AB
D
S
G
D
D (Drain)
G
(Gate)
S (Source)


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