STD888G-TN3-R datasheet(2/3 Pages) UTC

номер детали	STD888G-TN3-R

подробное описание детали	HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

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производитель	UTC [Unisonic Technologies]

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STD888

Preliminary

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R209-028.a



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage (IE=0)

VCBO

-60

V

Collector-Emitter Voltage (IB=0)

VCEO

-30

V

Emitter-Base Voltage (IC=0)

VEBO

-6

V

Collector Current

IC

-5

A

Collector Peak Current (tp<5ms)

ICM

-10

A

Total Dissipation at TC=25°C

PD

15

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IE=0, IC=-100µA

-60

V

Collector-Emitter Breakdown Voltage

BVCEO (Note 1) IB=0, IC=-10mA

-30

V

Emitter-Base Breakdown Voltage

BVEBO

IC=0, IE=-100µA

-6

V

Collector Cut-off Current

ICBO

VCB=-30V, IE=0

-10

nA

Emitter Cut-off Current

IEBO

IC=0, VEB=-6V

-10

nA

Collector-Emitter Saturation Voltage

VCE(sat)

(Note 1)

IC=-500mA, IB=-5mA

-0.15

V

IC=-2A, IB=-50mA

-0.25

V

IC=-5A, IB=-250mA

-0.70

V

IC=-6A, IB=-250mA

-0.70

V

IC=-8A, IB=-400mA

-1

V

IC=-10A, IB=-500mA

-1.5

V

Base-Emitter Saturation Voltage

VBE(sat)

(Note 1)

IC=-2A, IB=-50mA

-1.1

V

IC=-6A, IB=-250mA

-1.4

V

DC Current Gain

hFE

(Note 1)

IC=-10mA, VCE=-1V

150

200

IC=-500mA, VCE=-1V

150

200 300

IC=-5A, VCE=-1V

75

100

IC=-8A, VCE=-1V

40

55

IC=-10A, VCE=-1V

15

35

Delay Time

tD

IC=-3A, IB1=-IB2=-60mA

VCC=-20V

180 220

ns

Rise Time

tR

160 210

ns

Storage Time

tS

250 300

ns

Fall Time

tF

80

100

ns

Note: 1. Pulsed: Pulse duration=300µs, duty cycle≤1.5%

Аналогичный номер детали - STD888G-TN3-R

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	STD888G-TN3-R	126Kb / 3P	HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

More results

Аналогичное описание - STD888G-TN3-R

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STN888	107Kb / 9P	HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
Unisonic Technologies	STD888	126Kb / 3P	HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
STMicroelectronics	STD888	127Kb / 6P	HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
	STD790A	126Kb / 6P	MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
	STX790A	181Kb / 10P	Medium current,high performance,low voltage PNP transistor
	STX790A	166Kb / 10P	Medium current, high performance, low voltage PNP transistor
	STX790A	218Kb / 11P	Medium Current, High Performance, Low Voltage PNP Transistor
	STD790AT4	203Kb / 10P	Medium Current, High Performance, Low Voltage PNP Transistor
	STD888T4	192Kb / 10P	Medium Current, High Performance, Low Voltage PNP Transistor
	STD790A	168Kb / 9P	Medium current, high performance, low voltage PNP transistor

More results

STD888G-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

STD888G-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

Аналогичный номер детали - STD888G-TN3-R

Аналогичное описание - STD888G-TN3-R

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