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IRF3710 датащи(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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IRF3710 датащи(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 7 page SEMICONDUCTOR RoHS RoHS Nell High Power Products UNIT Min. 0.75 0.5 THERMAL RESISTANCE PARAMETER Thermal resistance, case to heatsink Thermal resistance, junction to case SYMBOL Rth(j-c) Rth(c-s) Typ. Max. ºC/W 62 Thermal resistance, junction to ambient Rth(j-a) UNIT V ns μA pF nC Max. 32 250 100 -100 100 0.13 410 12 58 45 47 72 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) C V = 0V, I = 250µA GS D TEST CONDITIONS I = 1mA, referenced to 25°C D V =100V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲ V / (BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 26 Gate to source charge V = 80V, V = 10V, I = 28A DS GS D Drain to source leakage current IDSS COSS CRSS td(ON) td(OFF) V/ºC Ω S nA T =150°C C Typ. Min. 0.023 25 130 V = 50V, DD (Note 1) I = 28A D V = 10V, R =2.5Ω GS G V = 25V, V = 0V, f =1MHz DS GS V = 20V, V = 0V GS DS V = -20V, V = 0V GS DS V =25V, I =28A DS D Forward transconductance Static drain to source on-state resistance RDS(ON) gfS V = 10V, l = 28A (Note 1) GS D Gate to drain charge (Miller charge) QGD 43 V =80V, V =0V DS GS 2 V 4 V =V , I =250μA GS DS D Gate threshold voltage VGS(TH) nH 7.5 4.5 Internal source inductance LS Internal drain inductance LD Between lead, 6mm from package and center of die SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified) C UNIT Max. TEST CONDITIONS PARAMETER SYMBOL Typ. Min. V I = 28A, V = 0V SD GS Diode forward voltage VSD 1.2 Integral reverse P-N junction diode in the MOSFET Continuous source to drain current Is(I ) SD 57 D (Drain) G (Gate) S (Source) A Pulsed source current ISM 230 I = 28A, V = 0V, SD GS dI /dt = 100A/µs F Reverse recovery time trr ns 140 nC Reverse recovery charge Qrr 670 Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% . tON Forward turn-on time 220 1010 Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD) 3130 www.nellsemi.com Page 2 of 7 IRF3710 Series STATIC DYNAMIC |
Аналогичный номер детали - IRF3710 |
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Аналогичное описание - IRF3710 |
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